| 摘要 |
A method for manufacturing a semiconductor device is provided to control GIDL(Gate Induced Drain Leakage) and to improve refresh characteristics of device by forming a lightly density doped region at each edge of a gate poly silicon layer when a gate of the semiconductor device is formed. A gate dielectric(220) and a poly silicon layer(230) are formed in turn on a semiconductor substrate(200). First conductive type impurities are implanted into the poly silicon layer. A mask pattern is formed on the poly silicon layer to expose a region except for at least gate forming region. Second conductive type impurities are implanted into the poly silicon layer by using the mask pattern as an ion implantation barrier to form each lightly density doped region at edges of both sides of the poly silicon layer part corresponding to a gate region. The mask pattern is removed. A metal silicide layer(240) and a hard mask layer(250) are formed in turn on the poly silicon layer. The hard mask layer, the metal silicide layer, the poly silicon layer, and the gate dielectric are in turn etched to form a gate(260).
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