| 发明名称 |
PIEZOELECTRIC THIN FILM AND METHOD FOR MANUFACTURING THE SAME, AND PIEZOELECTRIC ELEMENT |
| 摘要 |
A piezoelectric thin film comprising aluminum nitride containing magnesium and hafnium, wherein a content of the hafnium based on 100 atomic % of the magnesium is 8 atomic % or more and less than 100 atomic %, and a total content of the magnesium and hafnium based on a sum of a content of the magnesium, hafnium, and aluminum is in a range of 47 atomic % or less. |
| 申请公布号 |
US2015357555(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201514732988 |
申请日期 |
2015.06.08 |
| 申请人 |
Murata Manufacturing Co., Ltd. ;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
Umeda Keiichi;Honda Atsushi;Akiyama Morito;Nagase Toshimi;Nishikubo Keiko;Uehara Masato |
| 分类号 |
H01L41/316;C23C14/06;C23C14/34;H01L41/18;H01L41/08 |
主分类号 |
H01L41/316 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A piezoelectric film comprising:
aluminum nitride containing magnesium and hafnium, wherein a content of the hafnium based on 100 atomic % of the magnesium is in a range of 8 atomic % or more and less than 100 atomic %, and a total content of the magnesium and hafnium based on a sum of a content of the magnesium, hafnium, and aluminum is in a range of 47 atomic % or less. |
| 地址 |
Nagaokakyo-shi JP |
