OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE

摘要

With respect to this oxide for a semiconductor layer of a thin film transistor, metal elements that constitute the oxide comprise In, Ga, and Zn, the oxygen partial pressure when forming the oxide film as the semiconductor layer of the thin film transistor is 15 volume % or lower (not including 0 volume %), the defect density of the oxide satisfies 2×1016 cm−3 or less, and the mobility satisfies 6 cm2/Vs or more.

主权项

1. An oxide configured to be used as a semiconductor layer in a thin film transistor, the oxide comprising:
one or more metal elements selected from the group consisting of In, Ga, and Zn; wherein: the oxide is formed as the semiconductor layer in the film transistor at a partial pressure of oxygen of 15 volume % or lower not including 0 volume % the oxide has a defect density of 2×1016 cm−3 or smaller; and the oxide has a mobility of 6 cm2/Vs or larger.