发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 To provide a highly integrated semiconductor memory device. To provide a semiconductor memory device which can hold stored data even when power is not supplied. To provide a semiconductor memory device which has a large number of write cycles. The degree of integration of a memory cell array is increased by forming a memory cell including two transistors and one capacitor which are arranged three-dimensionally. The electric charge accumulated in the capacitor is prevented from being leaking by forming a transistor for controlling the amount of electric charge of the capacitor in the memory cell using a wide-gap semiconductor having a wider band gap than silicon. Accordingly, a semiconductor memory device which can hold stored data even when power is not supplied can be provided.
申请公布号 US2015357473(A1) 申请公布日期 2015.12.10
申请号 US201514735687 申请日期 2015.06.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ARAI Yasuyuki
分类号 H01L29/786;H01L29/423;H01L29/66 主分类号 H01L29/786
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP
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