发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
To provide a highly integrated semiconductor memory device. To provide a semiconductor memory device which can hold stored data even when power is not supplied. To provide a semiconductor memory device which has a large number of write cycles. The degree of integration of a memory cell array is increased by forming a memory cell including two transistors and one capacitor which are arranged three-dimensionally. The electric charge accumulated in the capacitor is prevented from being leaking by forming a transistor for controlling the amount of electric charge of the capacitor in the memory cell using a wide-gap semiconductor having a wider band gap than silicon. Accordingly, a semiconductor memory device which can hold stored data even when power is not supplied can be provided. |
申请公布号 |
US2015357473(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201514735687 |
申请日期 |
2015.06.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ARAI Yasuyuki |
分类号 |
H01L29/786;H01L29/423;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |