| 发明名称 |
SEMICONDUCTOR HETEROJUNCTION DEVICE |
| 摘要 |
In an example embodiment, a heterojunction device comprises a substrate, a multilayer structure disposed on the substrate. The multilayer structure has a first layer having a first semiconductor disposed on top of the substrate; a second layer has a second semiconductor is disposed on top of the first layer defining an interface between them. The second semiconductor differs from the first semiconductor such that a 2D Electron Gas forms adjacent to the interface. A first terminal couples to a first area of the interface between the first and second layers and a second terminal couples to a second area of the interface between the first and second layers; an electrically conducting channel comprises a metal or a region of the first layer with a higher defect density than another region of the first layer. The channel connects the second terminal and a region of the first layer such that electric charge can flow between them. |
| 申请公布号 |
US2015357456(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201514723247 |
申请日期 |
2015.05.27 |
| 申请人 |
NXP B.V. |
发明人 |
HURKX Godefridus Adrianus Maria;CROON Jeroen Antoon;DONKERS Johannes Josephus Theodorus Marinus;HEIL Stephan Bastiaan Simon;SONSKY Jan |
| 分类号 |
H01L29/778;H01L29/36;H01L29/872;H01L29/20;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A heterojunction semiconductor device comprising:
a substrate; a multilayer structure disposed on the substrate, the multilayer structure comprising:
a first layer comprising a first semiconductor disposed on top of the substrate;a second layer comprising a second semiconductor disposed on top of the first layer to define an interface between the first layer and the second layer, wherein the second semiconductor is different from the first semiconductor such that a Two-Dimensional Electron Gas forms adjacent to the interface; a first terminal electrically coupled to a first area of the interface between the first layer and second layer; and a second terminal electrically coupled to a second area of the interface between the first layer and second layer, and an electrically conducting channel comprising a metal or a region of the first layer with a higher defect density than another region of the first layer, wherein the electrically conducting channel connects the second terminal and a region of the first layer such that electric charge can flow between the second terminal and the first layer. |
| 地址 |
Eindhoven NL |
