| 发明名称 |
Semiconductor Device with Selectively Etched Surface Passivation |
| 摘要 |
A semiconductor device includes a semiconductor substrate configured to include a channel, first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel, and first and second dielectric layers supported by the semiconductor substrate. At least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers. The second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and the second dielectric layer includes a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer. |
| 申请公布号 |
US2015357452(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201514827755 |
申请日期 |
2015.08.17 |
| 申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Green Bruce M.;Hill Darrell G.;Huang Jenn Hwa;Moore Karen E. |
| 分类号 |
H01L29/778;H01L29/205;H01L29/20 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate configured to include a channel; first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel; and first and second dielectric layers supported by the semiconductor substrate wherein at least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers; wherein the second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and wherein the second dielectric layer comprises a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer. |
| 地址 |
Austin TX US |
