| 发明名称 |
DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRESS LAYER, AND RELATED METHODS |
| 摘要 |
Method of forming a deep trench capacitor are provided. The method may include forming a deep trench in a substrate; forming a metal-insulator-metal (MIM) stack within a portion of the deep trench, the MIM stack forming including forming an outer electrode by co-depositing a refractory metal and silicon into the deep trench; and filling a remaining portion of the deep trench with a semiconductor. |
| 申请公布号 |
US2015357402(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201514831487 |
申请日期 |
2015.08.20 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Breil Nicolas L.;Donaton Ricardo A.;Kang Dong Hun;Ho Herbert L.;Krishnan Rishikesh |
| 分类号 |
H01L49/02;H01L21/283 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a deep trench capacitor, the method comprising:
forming a deep trench in a substrate; forming a metal-insulator-metal (MIM) stack within a portion of the deep trench, the MIM stack forming including forming an outer electrode by co-depositing a refractory metal and silicon into the deep trench; and filling a remaining portion of the deep trench with a semiconductor. |
| 地址 |
Armonk NY US |
