BAFFLE STRUCTURE APPLYING PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING THE SAME

摘要

A baffle structure for a plasma chemical vapor deposition apparatus is installed in a reaction chamber having a reaction space to form a semiconductor layer on a substrate by using plasma, and uniformly sprays a reaction gas which is excited to the plasma to form the semiconductor layer, into the reaction space. The baffle structure for a plasma chemical vapor deposition apparatus is made of aluminum nitride (AIN) pellets having residual oxygen of 1% or less.