| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having transistors which have favorable electrical characteristics.SOLUTION: In a semiconductor device in which a storage circuit and a circuit are manufactured on the same substrate, the storage circuit has a capacitative element, a first transistor, and a second transistor;to a gate of the first transistor, the capacitative element and either of a source or a drain of the second transistor are electrically connected; the circuit has a third transistor and a fourth transistor; the first transistor and the third transistor each have a silicon-containing active layer; and the second transistor and the fourth transistor each have an active layer including an oxide semiconductor. |
