METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

One method for manufacturing a semiconductor device includes forming element isolation grooves and an element isolation groove having a width greater than that of the element isolation grooves in the semiconductor substrate, forming insulating films having relatively low fluidity and having upwardly released voids inside the element isolation grooves, and also covering substantially all of the interior surface of the element isolation groove, forming an insulating film having relatively high fluidity, whereby the insulating film is embedded in the interior of the voids, and reforming the insulating film.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a first element isolation trench and a second element isolation trench which is wider than the first element isolation trench in a semiconductor substrate; forming a first insulating film, said first insulating film having relatively low fluidity and forming a void which opens upward inside the first element isolation trench while also covering substantially the whole of the inner surface of the second element isolation trench; forming a second insulating film having relatively high fluidity, whereby said second insulating film fills the void; and a step in which modifying the second insulating film.