| 发明名称 |
SEMICONDUCTOR DEVICE HAVING FIN-SHAPED STRUCTURE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween. |
| 申请公布号 |
US2015357190(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201414312707 |
申请日期 |
2014.06.24 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chien Chin-Cheng;Hsu Hsin-Kuo;Liu Chih-Chien;Lin Chin-Fu;Wu Chun-Yuan |
| 分类号 |
H01L21/02;H01L29/36;H01L29/78;H01L21/311 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating semiconductor device with fin-shaped structure, comprising:
forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer for covering the exposed top surface and part of the sidewall of the fin-shaped structure; and removing a portion of the second dielectric layer. |
| 地址 |
Hsin-Chu City TW |
