| 发明名称 |
Fabrication of III-Nitride Power Semiconductor Device |
| 摘要 |
A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods. |
| 申请公布号 |
US2015357182(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201514831009 |
申请日期 |
2015.08.20 |
| 申请人 |
International Rectifier Corporation |
发明人 |
Beach Robert;Briere Michael A.;Bridger Paul |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
El Segundo CA US |
