发明名称 |
APPARATUS AND METHOD FOR MASS ANALYZED ION BEAM |
摘要 |
In one embodiment, a processing apparatus includes a plasma chamber configured to house a plasma comprising first ions and second ions. The apparatus may further include a resonance RF power supply to generate a drive signal that is coupled to the plasma chamber, the drive signal having a drive frequency. The apparatus may also include a magnet assembly to generate a magnetic field in the plasma chamber, wherein the magnet assembly is configured to generate a first magnetic field strength that imparts a first cyclotron frequency for the first ions that matches the drive frequency of the drive signal, wherein the first magnetic field strength imparts a second cyclotron frequency for the second ions that does not match the drive frequency of the drive signal, and wherein the first ions are selectively driven into a chamber wall of the plasma chamber. |
申请公布号 |
US2015357167(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201414299681 |
申请日期 |
2014.06.09 |
申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Lee W. Davis;Radovanov Svetlana;Kurunczi Peter F. |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
1. A processing apparatus, comprising:
a plasma chamber configured to house a plasma comprising first ions and second ions; a resonance RF power supply to generate a drive signal that is coupled to the plasma chamber, the drive signal having a drive frequency; and a magnet assembly to generate a magnetic field in the plasma chamber, wherein the magnetic field has a first magnetic field strength that imparts a first cyclotron frequency for the first ions that matches the drive frequency of the drive signal, wherein the first magnetic field strength imparts a second cyclotron frequency for the second ions that does not match the drive frequency of the drive signal, and wherein the first ions are selectively driven into a chamber wall of the plasma chamber. |
地址 |
Gloucester MA US |