发明名称 APPARATUS AND METHOD FOR MASS ANALYZED ION BEAM
摘要 In one embodiment, a processing apparatus includes a plasma chamber configured to house a plasma comprising first ions and second ions. The apparatus may further include a resonance RF power supply to generate a drive signal that is coupled to the plasma chamber, the drive signal having a drive frequency. The apparatus may also include a magnet assembly to generate a magnetic field in the plasma chamber, wherein the magnet assembly is configured to generate a first magnetic field strength that imparts a first cyclotron frequency for the first ions that matches the drive frequency of the drive signal, wherein the first magnetic field strength imparts a second cyclotron frequency for the second ions that does not match the drive frequency of the drive signal, and wherein the first ions are selectively driven into a chamber wall of the plasma chamber.
申请公布号 US2015357167(A1) 申请公布日期 2015.12.10
申请号 US201414299681 申请日期 2014.06.09
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Lee W. Davis;Radovanov Svetlana;Kurunczi Peter F.
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A processing apparatus, comprising: a plasma chamber configured to house a plasma comprising first ions and second ions; a resonance RF power supply to generate a drive signal that is coupled to the plasma chamber, the drive signal having a drive frequency; and a magnet assembly to generate a magnetic field in the plasma chamber, wherein the magnetic field has a first magnetic field strength that imparts a first cyclotron frequency for the first ions that matches the drive frequency of the drive signal, wherein the first magnetic field strength imparts a second cyclotron frequency for the second ions that does not match the drive frequency of the drive signal, and wherein the first ions are selectively driven into a chamber wall of the plasma chamber.
地址 Gloucester MA US