SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device includes: a memory cell array region having a plurality of normal cell lines and a plurality of repair cell lines; a plurality of normal cell line selection units suitable for selecting the plurality of normal cell lines, respectively, in response to a local address; a plurality of repair cell line selection units suitable for selecting the plurality of repair cell lines, respectively, in place of normal cell line selection units corresponding to fail information of the local address; a fuse driving unit comprising a fuse array in which the fail information is programmed, suitable for disabling the normal cell line selection units corresponding to the fail information, and enabling normal cell line selection units unrelated to the fail information; and an address determination unit suitable for controlling the plurality of repair cell line selection units based on the fail information.

主权项

1. A semiconductor memory device comprising:
a memory cell array region having a plurality of normal cell lines and a plurality of repair cell lines; a plurality of normal cell line selection units suitable for selecting the plurality of normal cell lines, respectively, in response to a local address; a plurality of repair cell line selection units suitable for selecting the plurality of repair cell lines, respectively, in place of normal cell line selection units corresponding to fail information of the local address among the plurality of normal cell line selection units; a fuse driving unit having a fuse array in which the fail information is programmed, suitable for disabling the normal cell line selection units corresponding to the fail information, and enabling normal cell line selection units unrelated to the fail information; and an address determination unit suitable for controlling the plurality of repair cell line selection units based on the fail information programmed in the fuse array.