发明名称 |
GRAPHENE MANUFACTURING APPARATUS AND METHOD |
摘要 |
A graphene manufacturing apparatus includes a gas supplying unit supplying a gas including carbon; a gas heating unit heating the gas supplied from the gas supplying unit; a deposition chamber in which a substrate having a catalyst layer is disposed; and an inlet pipe introducing the gas of the gas heating unit into the deposition chamber. A temperature of the deposition chamber is set at a temperature lower than a temperature of the gas heating unit so that a selection range with respect to a catalyst metal to be used in the catalyst layer may be expanded, and damage of the substrate due to a high temperature heat may be minimized. |
申请公布号 |
US2015353362(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201514831031 |
申请日期 |
2015.08.20 |
申请人 |
Hanwha Techwin Co., Ltd. |
发明人 |
WON Dong-kwan;CHO Seung-min |
分类号 |
C01B31/04 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing graphene, the method comprising:
moving a substrate having a catalyst layer to a deposition chamber; supplying a gas comprising carbon to a gas chamber separately disposed from the deposition chamber; heating the gas to a temperature at which the carbon is separated from the gas; and introducing the gas heated in the gas chamber into the deposition chamber, and synthesizing graphene on the substrate. |
地址 |
Changwon-si KR |