发明名称 GRAPHENE MANUFACTURING APPARATUS AND METHOD
摘要 A graphene manufacturing apparatus includes a gas supplying unit supplying a gas including carbon; a gas heating unit heating the gas supplied from the gas supplying unit; a deposition chamber in which a substrate having a catalyst layer is disposed; and an inlet pipe introducing the gas of the gas heating unit into the deposition chamber. A temperature of the deposition chamber is set at a temperature lower than a temperature of the gas heating unit so that a selection range with respect to a catalyst metal to be used in the catalyst layer may be expanded, and damage of the substrate due to a high temperature heat may be minimized.
申请公布号 US2015353362(A1) 申请公布日期 2015.12.10
申请号 US201514831031 申请日期 2015.08.20
申请人 Hanwha Techwin Co., Ltd. 发明人 WON Dong-kwan;CHO Seung-min
分类号 C01B31/04 主分类号 C01B31/04
代理机构 代理人
主权项 1. A method of manufacturing graphene, the method comprising: moving a substrate having a catalyst layer to a deposition chamber; supplying a gas comprising carbon to a gas chamber separately disposed from the deposition chamber; heating the gas to a temperature at which the carbon is separated from the gas; and introducing the gas heated in the gas chamber into the deposition chamber, and synthesizing graphene on the substrate.
地址 Changwon-si KR