SEMICONDUCTOR DEVICE

摘要

In order to prevent a crack from developing in an interlayer insulating film formed under a bonding pad due to impact, the bonding pad is formed so that small diameter metal plugs (14a) and large diameter metal plugs (14b) are arranged between a first metal film (12) and a second metal film (15) as an uppermost layer, and recessed portions (17) are formed in a surface of the second metal film (15) above the large diameter metal plugs 14b.

主权项

1. A semiconductor device having a bonding pad, comprising:
a first metal film formed on a first interlayer insulating film; a second interlayer insulating film formed on the first metal film; a metal plug formed so as to pierce the second interlayer insulating film; and the bonding pad formed on the second interlayer insulating film so as to make electrical connection via the metal plug, the bonding pad being formed of a second metal film, wherein the metal plug comprises a first metal plug having a large diameter, and wherein the second metal film enters the first metal plug so that a surface of the bonding pad directly above the first metal plug has a recessed portion formed therein.