发明名称 |
METHOD OF REDUCING RESIDUAL CONTAMINATION IN SINGULATED SEMICONDUCTOR DIE |
摘要 |
In one embodiment, semiconductor die are singulated from a semiconductor wafer by placing the semiconductor wafer onto a carrier tape, forming singulation lines through the semiconductor wafer, and reducing the presence of residual contaminates on the semiconductor wafer. |
申请公布号 |
US2015357241(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201514612994 |
申请日期 |
2015.02.03 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
Doub Jason Michael;Grivna Gordon M. |
分类号 |
H01L21/78;H01L21/02;H01L21/3065;H01L23/544;H01L21/683 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
1. A method for processing semiconductor die comprising:
providing a semiconductor wafer having a plurality of semiconductor die formed on the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces; placing the semiconductor wafer onto a first carrier substrate; singulating the semiconductor wafer through the spaces to form singulation lines adjacent the plurality of semiconductor die; and reducing the presence of residual contaminants from surfaces of the plurality of semiconductor die using a first fluid. |
地址 |
Phoenix AZ US |