发明名称 METHOD OF REDUCING RESIDUAL CONTAMINATION IN SINGULATED SEMICONDUCTOR DIE
摘要 In one embodiment, semiconductor die are singulated from a semiconductor wafer by placing the semiconductor wafer onto a carrier tape, forming singulation lines through the semiconductor wafer, and reducing the presence of residual contaminates on the semiconductor wafer.
申请公布号 US2015357241(A1) 申请公布日期 2015.12.10
申请号 US201514612994 申请日期 2015.02.03
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 Doub Jason Michael;Grivna Gordon M.
分类号 H01L21/78;H01L21/02;H01L21/3065;H01L23/544;H01L21/683 主分类号 H01L21/78
代理机构 代理人
主权项 1. A method for processing semiconductor die comprising: providing a semiconductor wafer having a plurality of semiconductor die formed on the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces; placing the semiconductor wafer onto a first carrier substrate; singulating the semiconductor wafer through the spaces to form singulation lines adjacent the plurality of semiconductor die; and reducing the presence of residual contaminants from surfaces of the plurality of semiconductor die using a first fluid.
地址 Phoenix AZ US