| 摘要 |
To provide a semiconductor device having improved reliability at an improved production yield.;After forming an insulating film on the main surface of a semiconductor substrate as an oxide film, form a silicon nitride film on the insulating film. Then, form an element isolating trench by plasma dry etching, form an insulating film made of silicon oxide so as to fill the trench by using HDP-CVD, and remove the insulating film outside the trench by CMP, while leaving the insulating film in the trench. Then, remove the silicon nitride film, followed by removal of the insulating film by wet etching to expose the semiconductor substrate. At this time the insulating film is wet etched while applying light of 140 lux or greater to the main surface of the semiconductor substrate. |
