| 发明名称 |
ELECTRONIC DEVICE |
| 摘要 |
This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto. |
| 申请公布号 |
US2015357557(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201414559509 |
申请日期 |
2014.12.03 |
| 申请人 |
KIM Yang-Kon;LEE Bo-Mi;CHOI Won-Joon;KIM Guk-Cheon;WATANABE Daisuke;NAGAMINE Makoto;EEH Young-Min;UEDA Koji;NAGASE Toshihiko;SAWADA Kazuya |
发明人 |
KIM Yang-Kon;LEE Bo-Mi;CHOI Won-Joon;KIM Guk-Cheon;WATANABE Daisuke;NAGAMINE Makoto;EEH Young-Min;UEDA Koji;NAGASE Toshihiko;SAWADA Kazuya |
| 分类号 |
H01L43/02;G06F3/06;G06F12/08;G11C11/15 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising a semiconductor memory, wherein the semiconductor memory includes:
a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes ferromagnetic material and molybdenum (Mo) as an additive. |
| 地址 |
Gyeonggi-do KR |
