| 发明名称 |
P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUBSTRATE |
| 摘要 |
An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers. |
| 申请公布号 |
US2015357419(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201514828148 |
申请日期 |
2015.08.17 |
| 申请人 |
AZURSPACE Solar Power GmbH |
发明人 |
LUTGEN Stephan;MURAD Saad;CHITNIS Ashay |
| 分类号 |
H01L29/205;H01L29/778;H01L21/02;H01L33/00;H01L29/15;H01L29/36;H01L29/872 |
主分类号 |
H01L29/205 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. An epitaxial group-III-nitride buffer-layer structure on a heterosubstrate, the buffer-layer structure comprising:
a first and a second group-III-nitride layer at least one stress management layer sequence including an interlayer structure arranged between and adjacent to the first and second group-III-nitride layer, wherein the interlayer structure comprises a group-III-nitride interlayer material having a larger band gap than the materials of the first and second group-III-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm−3, by at least a factor of two in transition from the interlayer structure to the first and second group-III-nitride layers. |
| 地址 |
Heilbronn DE |
