发明名称 Polylactide/Silicon-Containing Block Copolymers for Nanolithography
摘要 The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.
申请公布号 US2015353763(A1) 申请公布日期 2015.12.10
申请号 US201514827876 申请日期 2015.08.17
申请人 Board of Regents, The University of Texas System 发明人 Ellison Christopher J.;Willson Carlton Grant;Cushen Julia;Bates Christopher M.
分类号 C09D167/00 主分类号 C09D167/00
代理机构 代理人
主权项
地址 Austin TX US
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