发明名称
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a laser beam machining method by which a semiconductor substrate is accurately cut along a predetermined cutting line. <P>SOLUTION: By applying a laser beam after aligning the condensed point to the inside of the semiconductor substrate 1, cutting start regions 9a, 9b caused by modified areas which are extended along the predetermined cutting line of the semiconductor substrate 1 and one end and the other end do not reach the outer edge of the semiconductor substrate 1 are formed in the inside of the semiconductor substrate 1 and the semiconductor substrate 1 is cut along the predetermined cutting line by taking the cutting start regions 9a, 9b by the modified areas as the starting point of cutting. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP3990710(B2) 申请公布日期 2007.10.17
申请号 JP20060069929 申请日期 2006.03.14
申请人 发明人
分类号 B23K26/38;B23K26/40;B23K101/40;H01L21/301 主分类号 B23K26/38
代理机构 代理人
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