| 摘要 |
Methods for depositing and etching tungsten using tungsten chloride reaction substances and an apparatus therefore are provided in the present disclosure. The methods involve using tungsten chlorides (wclx) as both precursor and etchant. According to some embodiments, the methods comprises the steps of: exposing a substrate to a wclx precursor and a reducing agent at a first set of conditions to deposit a first tungsten layer inside a feature on the substrate; and exposing the substrate to the wclx precursor and the reducing agent at a second set of conditions to etch the first tungsten layer. According to various embodiments, a transition from a deposition situation to an etch situation can involve one or more of increasing a WClx flux, decreasing a temperature, and changing the WClx precursor. Also the related apparatus is provided. |
