| 摘要 |
The present invention, in a plasma processing method using an inductively coupled plasma etching apparatus comprising a Faraday shield, provides a plasma processing method capable of performing an etching process and a film forming process on a magnetic film in one processing chamber. According to the plasma processing method for performing plasma etching on a magnetic film using a plasma processing apparatus comprising: a processing chamber where a sample is plasma-processed; a dielectric window which air-tightly seals an upper part of the processing chamber; an inductively coupled antenna arranged in an upper part of the dielectric window; a high frequency power source for supplying high frequency electricity to the inductively coupled antenna; and a Faraday shield which is arranged between the inductively coupled antenna and the dielectric window, the magnetic film is plasma-etched and then a deposited film is formed on the magnetic film plasma-etched by the plasma processing while applying a high frequency voltage to the Faraday shield. |
