| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly versatile, simple and practical pattern forming method of a functional film, capable of forming the functional film using a high temperature process. <P>SOLUTION: The method comprises: a step of directly or indirectly forming a first sacrifice layer to be selectively etched with a specified etchant on a substrate; a step of forming a second sacrifice layer whose resistance against thermal or physical action force is weaker than the first sacrifice layer on the first sacrifice layer; a step of forming the functional film by a functional material on the substrate on which the first and the second sacrifice layers are formed; a step of forming a passing hole, a crack or a gap for making the specified etchant reach the first sacrifice layer by applying the thermal and/or physical action force to the second sacrifice layer and partially removing the second sacrifice layer; and a step of removing the first and the second sacrifice layers and the functional film on the second sacrifice layer by etching the first sacrifice layer through the passing hole or the like using the specified etchant. <P>COPYRIGHT: (C)2009,JPO&INPIT |
