SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

摘要

The purpose of the present invention is to inhibit a change in electrical characteristics and to improve the reliability of a semiconductor device using a transistor including an oxide semiconductor. In a semiconductor device comprising a transistor, the transistor includes an oxide semiconductor film in a channel region, and a change from a shift value before light irradiation to a shift value under light irradiation is greater than or equal to -1 V and less than or equal to 0.5 V, where the shift value is a gate voltage of the transistor at a point of intersection of an axis of 1×10^(-12) A and a steepest tangent line of a logarithm of a drain current in drain current-gate voltage characteristics of the transistor, and where the light emission is performed on the oxide semiconductor film with light having an energy greater than or equal to a band gap of the oxide semiconductor film.