发明名称 PRODUCTION APPARATUS AND METHOD FOR PRODUCING MG2SI1-XSNX POLYCRYSTALS
摘要 Provided are an apparatus and a method for producing an inexpensive Mg 2 Si 1-x Sn x polycrystal that can be effectively used as thermoelectric conversion materials that can be expected to have a high performance index by doping if necessary. A problem can be solved by a production apparatus 1 for producing an Mg 2 Si 1-x Sn x polycrystal including at least a reaction vessel for synthesis of Mg 2 Si 1-x Sn x represented by the following formula (1) by filling a mixture of Mg particles and Si particles or Mg particles and Sn particles, or Mg-Si alloy particles or Mg-Sn alloy particles as a main starting material 2 to cause a reaction; an inorganic fiber layer 6 which is fixedly provided above the starting material 2 filled into the reaction vessel 3 and has air permeability, which can be caused to disappear by a product 7 generated by chemical reaction of vaporized Mg with oxygen during the synthesis of the polycrystal 12; heating means 8 for heating the reaction vessel 3; and control means 9 for controlling the heating temperature and heating time of the reaction vessel 3, wherein €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒMg 2 Si 1-x Sn x €ƒ€ƒ€ƒ€ƒ€ƒ(1) (in the formula (1), x is 0 to 1).
申请公布号 EP2548845(A4) 申请公布日期 2015.12.09
申请号 EP20110756479 申请日期 2011.03.16
申请人 IBARAKI UNIVERSITY;SHOWA KDE CO., LTD. 发明人 UDONO, HARUHIKO;MITO, YOUHIKO
分类号 C01B33/06;C22C1/02;C22C13/00;C22C23/00;C22C29/18;H01L35/14;H01L35/20;H01L35/34 主分类号 C01B33/06
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