发明名称 |
PRODUCTION APPARATUS AND METHOD FOR PRODUCING MG2SI1-XSNX POLYCRYSTALS |
摘要 |
Provided are an apparatus and a method for producing an inexpensive Mg 2 Si 1-x Sn x polycrystal that can be effectively used as thermoelectric conversion materials that can be expected to have a high performance index by doping if necessary. A problem can be solved by a production apparatus 1 for producing an Mg 2 Si 1-x Sn x polycrystal including at least a reaction vessel for synthesis of Mg 2 Si 1-x Sn x represented by the following formula (1) by filling a mixture of Mg particles and Si particles or Mg particles and Sn particles, or Mg-Si alloy particles or Mg-Sn alloy particles as a main starting material 2 to cause a reaction; an inorganic fiber layer 6 which is fixedly provided above the starting material 2 filled into the reaction vessel 3 and has air permeability, which can be caused to disappear by a product 7 generated by chemical reaction of vaporized Mg with oxygen during the synthesis of the polycrystal 12; heating means 8 for heating the reaction vessel 3; and control means 9 for controlling the heating temperature and heating time of the reaction vessel 3, wherein
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒMg 2 Si 1-x Sn x €ƒ€ƒ€ƒ€ƒ€ƒ(1)
(in the formula (1), x is 0 to 1). |
申请公布号 |
EP2548845(A4) |
申请公布日期 |
2015.12.09 |
申请号 |
EP20110756479 |
申请日期 |
2011.03.16 |
申请人 |
IBARAKI UNIVERSITY;SHOWA KDE CO., LTD. |
发明人 |
UDONO, HARUHIKO;MITO, YOUHIKO |
分类号 |
C01B33/06;C22C1/02;C22C13/00;C22C23/00;C22C29/18;H01L35/14;H01L35/20;H01L35/34 |
主分类号 |
C01B33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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