| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the density of a target for P type transparent conductive material composed mainly of oxychalcogenides containing La and Cu, to manufacture the target of a larger size at a low cost, to achieve elimination of the presence of unreacted matter in the target, and to inhibit target cracking to thereby improve product yield, and further to enhance the quality of a film. <P>SOLUTION: The process for producing the sputtering target composed mainly of oxychalcogenides containing La and Cu of a relative density of ≥90% comprises using at least one powder selected from among constituent elements themselves and oxides and chalcogenides thereof as a raw material, and removing gaseous components, in which the mean particle diameter of the raw material powder for sintering is ≤50 μm and the specific surface area is ≥0.2 m<SP>2</SP>/g. The process comprises a reaction step of maintaining ≤850°C for 1 hr or more during sintering step, and the sintering is performed at 500 to 1,000°C which is the temperature above the reaction step temperature after the reaction step. <P>COPYRIGHT: (C)2009,JPO&INPIT |
