SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

摘要

Provided is a threshold voltage adjustment means of a semiconductor device. In a semiconductor device in which at least one among transistors constituting an inverter includes: a semiconductor; a source electrode or a drain electrode electrically connected to the semiconductor; a gate electrode; and a charge trap layer provided between the gate electrode and the semiconductor, the potential of the gate electrode of the transistor which is higher than the potential of the source electrode or the drain electrode, and is held for a short time not longer than five seconds, thereby trapping electrons in the charge trap layer and increasing the threshold voltage. At this time, when the gate electrode and the source electrode of the semiconductor device or the potential differences between the gate electrode and the source electrode are different from each other, the threshold voltage of the transistor of the semiconductor becomes appropriate.