| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing device in which phosphoric acid solution having a desired silicon concentration can be supplied to an immersion processing bath.SOLUTION: Etching processing of a substrate W is progressed in an immersion processing bath 10 in which phosphoric acid solution is stored. The phosphoric acid solution is circulated by a circulation line 20 in the immersion processing bath 10. A part of used phosphoric acid solution having high silicon concentration which is discharged from the immersion processing bath 10 is temporality stored in a storage tank 30 through the circulation line 20. The used phosphoric acid solution and reproduction phosphoric acid solution having low silicon concentration which is stored in a low silicon phosphoric acid tank 40 are supplied to a mixing tank 50, and the phosphoric acid solution whose silicon concentration is to be in a proper range is mixed. Then, the mixed phosphoric acid solution is supplied to the immersion processing bath 10 from the mixing tank 50 when all the solution is exchanged. |
