| 摘要 |
The present invention provides a semiconductor device having a small occupied area. The semiconductor device has a resistor element, and the resistor element has a transistor. When the transistor has a drain voltage bigger than a difference between a gate voltage and a threshold voltage, it is desired that the rate of increase in a drain current, when the drain voltage is changed by 0.1.V, is greater than or equal to one percent. Also, the semiconductor device has a function of generating voltage in accordance with a resistance value of the resistor element. |
