| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer manufacturing method which inhibits the occurrence of a measurement error in substrate temperature of a substrate where an epitaxial layer is vapor deposited.SOLUTION: An epitaxial wafer manufacturing method comprises the steps of: dividing by a half mirror 13, beams of a first electromagnetic wave which is emitted from a substrate W in a reacting furnace 2 and transmitted through a window part 2a of the reacting furnace 2 to the outside, and a second electromagnetic wave which is emitted from the window part 2a and travels a path the same with that of the first electromagnetic wave; detecting a substrate temperature T1 from one of the divided beams by a first pyrometer 14a; detecting a window temperature T2 from the other of the divided beams by a second pyrometer 14b; and heating the substrate W to a growth temperature for epitaxial growth by using the substrate temperature T1 as an index in a state of keeping the detected window temperature T2 is kept constant.SELECTED DRAWING: Figure 1 |
