SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device is provided that includes a semiconductor substrate including a first surface in which an integrated circuit and an I/O pad electrically connected to the integrated circuit are formed, and a second surface which is an opposite side to the first surface, that includes a two-stage through-hole formed in the semiconductor substrate, including a first shape portion having a tapered shape which has a wall surface and of which a diameter of an opening becomes smaller toward a bottom of the hole from the second surface side to a predetermined position of the semiconductor substrate in a thickness direction, and including a second shape portion having a cylindrical shape which extends from the first shape portion to the I/O pad on the first surface side, that includes an inorganic insulating film which is formed on the wall surface of the two-stage through-hole and the second surface, that includes a through-electrode of a metal layer which is formed on the I/O pad and the wall surface of the two-stage through-hole; and that includes a wiring pattern formed on the second surface and connected to the through-electrode.