| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device in a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: a process of arranging a second circuit base material 30 in which first through holes 30a and second through holes 30b are formed above a first circuit base material 20 including a plurality of electrodes 22 formed on a surface; a process of passing a plurality of first bumps 51 formed on a plurality of second electrodes 52 of a semiconductor component 50, respectively into the first through holes 30a and the second through holes 30b and contacting the plurality of first bumps 51 with the plurality of first electrodes 22; and a process of heating the first bumps 51 to melt to bond the first bumps 51 to the first electrodes 22.</p> |
