Transistor device and fabrication method

摘要

A transistor and a fabrication method are provided. In an exemplary transistor, a gate structure is formed on a surface of the substrate. A first doped region is formed in the substrate on both sides of the gate structure. An opening is formed in the first doped region. A stress layer is formed in the opening of the first doped region on the both sides of the gate structure. The stress layer has a thickness in the substrate less than a depth of the first doped region. The first doped region has a bottom in the substrate surrounding a bottom of the stress layer. The stress layer further contains a second doped region. The second doped region and the first doped region form a source region or a drain region.

主权项

1. A method for fabricating a transistor, comprising:
providing a substrate; forming a gate structure on a surface of the substrate; forming a first doped region in the substrate by a first ion implantation on both sides of the gate structure; forming an opening within the first doped region, wherein the opening has a depth in the substrate less than a depth of the first doted region, and a bottom of the first doped region in the substrate is outside of the opening to surround a bottom of the opening; forming a stress layer to fill up the opening within the first doped region on the both sides of the gate structure, wherein the stress layer has a thickness in the substrate less than the depth of the first doped region, and the bottom of the first doped region in the substrate is outside of the stress layer to surround a bottom of the stress layer; and forming a second doped region within the stress layer, wherein the second doped region and the first doped region form a source region or a drain region.