Self aligned replacement fin formation

摘要

Methods and apparatus for forming FinFET structures are provided. Selective etching and deposition processes described herein may provide for FinFET manufacturing without the utilization of multiple patterning processes. Embodiments described herein also provide for fin material manufacturing methods for transitioning from silicon to III-V materials while maintaining acceptable crystal lattice orientations of the various materials utilized. Further embodiments provide etching apparatus which may be utilized to perform the methods described herein.

主权项

1. A method of forming a semiconductor device, comprising:
forming a plurality of mandrel structures having sidewalls on a substrate; depositing a first fin material on the sidewalls of the plurality of mandrel structures to form a plurality of first fin structures; removing the plurality of mandrel structures; depositing a second fin material on sidewalls of the plurality of first fin structures to form a plurality of second fin structures; removing the plurality of first fin structures; depositing a mask on a region of the plurality of second fin structures; depositing a third fin material on sidewalls of the plurality of second fin structures in an unmasked region to form a plurality of third fin structures; removing the plurality of second fin structures from the unmasked region; and removing the mask.