发明名称 Power semiconductor module having layered insulating side walls
摘要 A power semiconductor module includes at least two interconnected power semiconductor units having actuatable power semiconductors, a module housing in which the power semiconductor units are disposed and which has an electrically insulating side wall, and at least one connection bus extended through the side wall and connected to at least one of the power semiconductor units. High explosion resistance and particularly inexpensive production are provided by forming the insulating side wall as a stack of insulating and partial elements constructed as a single piece, in which contact areas of the partial elements contact each other.
申请公布号 US9210826(B2) 申请公布日期 2015.12.08
申请号 US200913256275 申请日期 2009.03.13
申请人 Siemens Aktiengesellschaft;Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V. 发明人 Billmann Markus;Bloesch Christoph;Malipaard Dirk;Zenkner Andreas
分类号 H01L23/48;H05K7/14;H01L25/07;H01L23/04;H01L23/498;H01L23/10 主分类号 H01L23/48
代理机构 代理人 Greenberg Laurence A.;Stemer Werner H.;Locher Ralph E.
主权项 1. A power semiconductor module, comprising: a module housing having an electrically insulating side wall, said insulating side wall being entirely constructed as a stack of insulating partial elements formed as a single piece, said partial elements having contact areas resting against one another; at least two interconnected power semiconductor units disposed in said module housing and having switchable power semiconductors; and at least one connecting bar extended through said side wall and connected to at least one of said power semiconductor units; said partial elements being circumferentially closed.
地址 Munich DE