Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching

摘要

A method of forming an integrated circuit device includes forming a gate stack covering a middle portion of a semiconductor fin, forming a gate spacer layer over the gate stack and the semiconductor fin, and patterning the gate spacer layer. The resulting spacers include a gate spacer on a sidewall of the gate stack, and a fin spacer on a sidewall of an end portion of the semiconductor fin. The fin spacer is then etched. When the etching is finished, a height of the fin spacer is smaller than about a half of the height of the semiconductor fin.

主权项

1. A method comprising:
forming a gate stack covering a middle portion of a semiconductor fin; forming a gate spacer layer over the gate stack and the semiconductor fin; patterning the gate spacer layer to form:
a gate spacer on a sidewall of the gate stack; anda fin spacer on a sidewall of an end portion of the semiconductor fin; and etching the fin spacer, wherein when the step of etching the fin spacer is finished, a first height of the fin spacer is smaller than about a half of a second height of the semiconductor fin.