ESD devices comprising semiconductor fins

摘要

A device includes a semiconductor substrate, and an insulation region extending from a top surface of the semiconductor substrate into the semiconductor substrate. The device further includes a first node and a second node, and an Electro-Static Discharge (ESD) device coupled between the first node and the second node. The ESD device includes a semiconductor fin adjacent to and over a top surface of the insulation region. The ESD device is configured to, in response to an ESD transient on the first node, conduct a current from the first node to the second node.

主权项

1. A device comprising:
a semiconductor substrate; an insulation region extending from a top surface of the semiconductor substrate into the semiconductor substrate; a first node and a second node; and an Electro-Static Discharge (ESD) device coupled between the first node and the second node, wherein the ESD device comprises a first Fin Field-Effect Transistor (FinFET) comprising:
a first semiconductor fin adjacent to and over a top surface of the insulation region;a first gate dielectric on sidewalls and a top surface of the first semiconductor fin, wherein the ESD device is configured to, in response to an ESD transient on the first node, conduct a current from the first node to the second node; and a second FinFET as a logic device, wherein the second FinFET comprises:
a second semiconductor fin over the semiconductor substrate; anda second gate dielectric on sidewalls and a top surface of the second semiconductor fin, wherein the first gate dielectric and the second gate dielectric have a same thickness.