| 发明名称 | High-frequency amplifier | ||
| 摘要 | A high-frequency amplifier includes: a first transistor having a source connected to ground; a second transistor forming a cascode circuit with the first transistor; a series circuit connected between a gate of the second transistor and the ground, the series circuit being formed by a first resistive element and a series resonant circuit connected in series with each other; and a second resistive element connected in parallel to the series circuit. The high-frequency amplifier can achieve low distortion characteristics while ensuring operational stability in a wide band. | ||
| 申请公布号 | US9209752(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201313784607 | 申请日期 | 2013.03.04 |
| 申请人 | Renesas Electronics Corporation | 发明人 | Takenaka Isao |
| 分类号 | H03F1/22;H03F1/32;H03F1/34;H03F3/193;H03F3/26 | 主分类号 | H03F1/22 |
| 代理机构 | McGinn IP Law Group, PLLC | 代理人 | McGinn IP Law Group, PLLC |
| 主权项 | 1. A high-frequency amplifier, comprising: a first transistor having a source connected to ground; a second transistor forming a cascode circuit with the first transistor; a series circuit connected between a gate of the second transistor and the ground, the series circuit being formed by a first resistive element and a series resonant circuit connected in series with each other; and a second resistive element connected in parallel to the series circuit, wherein, the high-frequency amplifier satisfies 1/gm<R1≦R2<30/gm, provided that resistance values of the first and second resistive elements are R1 and R2, respectively, and a transconductance of the second transistor is gm. | ||
| 地址 | Kawasaki-shi, Kanagawa JP | ||