| 发明名称 | Semiconductor device and manufacturing method of the same | ||
| 摘要 | According to one embodiment, a semiconductor device using a graphene film comprises a catalytic metal layer formed on a groundwork substrate includes a contact via, and a multilayered graphene layer formed in a direction parallel with a surface of the substrate. The catalytic metal layer is formed to be connected to the contact via and covered with an insulation film except one side surface. The multilayered graphene layer is grown from the side surface of the catalytic metal layer which is not covered with the insulation film. | ||
| 申请公布号 | US9209125(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201414176993 | 申请日期 | 2014.02.10 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Isobayashi Atsunobu;Kajita Akihiro;Sakai Tadashi |
| 分类号 | H01L23/48;H01L23/498;H01L21/00 | 主分类号 | H01L23/48 |
| 代理机构 | Holtz, Holtz, Goodman & Chick PC | 代理人 | Holtz, Holtz, Goodman & Chick PC |
| 主权项 | 1. A semiconductor device comprising: a catalytic metal layer formed on a groundwork substrate comprising a contact via, the catalytic metal layer being formed to be connected to the contact via and covered with an insulation film except one side surface; and a multilayered graphene layer formed in a direction parallel with a surface of the substrate, the multilayered graphene layer being grown from the side surface of the catalytic metal layer which is not covered with the insulation film. | ||
| 地址 | Tokyo JP | ||