发明名称 Low energy magnetic domain wall logic device
摘要 A logic gate device is disclosed. The logic gate device structure can include a magnetic tunnel junction on a soft ferromagnetic wire to provide a readout. One input contact can be at one end of the soft ferromagnetic wire and a second input contact can be at the other end of the soft ferromagnetic wire to control domain wall position in the soft ferromagnetic wire.
申请公布号 US9208845(B2) 申请公布日期 2015.12.08
申请号 US201213676656 申请日期 2012.11.14
申请人 MASSACHUSETTS INSTIUTE OF TECHNOLOGY 发明人 Currivan Incorvia Jean Anne;Baldo Marc A.;Ross Caroline A.
分类号 H03K19/173;G11C11/16;G11C11/14 主分类号 H03K19/173
代理机构 Talem IP Law, LLP 代理人 Talem IP Law, LLP
主权项 1. A magnetic domain wall (MDW) logic gate device, comprising: a soft ferromagnetic layer having a single magnetic domain wall; a magnetic tunnel junction (MTJ) on the soft ferromagnetic layer and having an output terminal thereon connected to a signal line, the MTJ providing an output to the signal line indicative of a logical ZERO or a logical ONE according to a position of the single magnetic domain wall in the soft ferromagnetic layer; an input contact configured to receive two or more inputs on the soft ferromagnetic layer at one side of the MTJ; and a clock input contact on the soft ferromagnetic layer at the other side of the MTJ from the input contact, the clock input contact coupled to receive a voltage pulse.
地址 Cambridge MA US