发明名称 |
Low energy magnetic domain wall logic device |
摘要 |
A logic gate device is disclosed. The logic gate device structure can include a magnetic tunnel junction on a soft ferromagnetic wire to provide a readout. One input contact can be at one end of the soft ferromagnetic wire and a second input contact can be at the other end of the soft ferromagnetic wire to control domain wall position in the soft ferromagnetic wire. |
申请公布号 |
US9208845(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201213676656 |
申请日期 |
2012.11.14 |
申请人 |
MASSACHUSETTS INSTIUTE OF TECHNOLOGY |
发明人 |
Currivan Incorvia Jean Anne;Baldo Marc A.;Ross Caroline A. |
分类号 |
H03K19/173;G11C11/16;G11C11/14 |
主分类号 |
H03K19/173 |
代理机构 |
Talem IP Law, LLP |
代理人 |
Talem IP Law, LLP |
主权项 |
1. A magnetic domain wall (MDW) logic gate device, comprising:
a soft ferromagnetic layer having a single magnetic domain wall; a magnetic tunnel junction (MTJ) on the soft ferromagnetic layer and having an output terminal thereon connected to a signal line, the MTJ providing an output to the signal line indicative of a logical ZERO or a logical ONE according to a position of the single magnetic domain wall in the soft ferromagnetic layer; an input contact configured to receive two or more inputs on the soft ferromagnetic layer at one side of the MTJ; and a clock input contact on the soft ferromagnetic layer at the other side of the MTJ from the input contact, the clock input contact coupled to receive a voltage pulse. |
地址 |
Cambridge MA US |