Nanostructure device and method for manufacturing nanostructures

摘要

A method for manufacturing a plurality of nanostructures (101) on a substrate (102). The method comprises the steps of: depositing a bottom layer (103) on an upper surface of the substrate (102), the bottom layer (103) comprising grains having a first average grain size; depositing a catalyst layer (104) on an upper surface of the bottom layer (103), the catalyst layer (104) comprising grains having a second average grain size different from the first average grain size, thereby forming a stack of layers comprising the bottom layer (103) and the catalyst layer (104); heating the stack of layers to a temperature where nanostructures (101) can form; and providing a gas comprising a reactant such that the reactant comes into contact with the catalyst layer (104).

主权项

1. A method for manufacturing a plurality of nanostructures on a substrate, the method comprising the steps of:
depositing a bottom layer on an upper surface of the substrate using a first deposition method tuned to achieve a first crystallographic grain structure having a first average grain size; depositing a catalyst layer on an upper surface of the bottom layer using a second deposition method tuned to achieve a second crystallographic grain structure having a second average grain size larger than said first average grain size, thereby forming a stack of layers comprising said bottom layer and said catalyst layer; heating the stack of layers to a temperature that is sufficient for nanostructure growth and that results in interdiffusion between the bottom layer having the first average grain size and the catalyst layer having the second average grain size; and providing a gas comprising a reactant such that the reactant comes into contact with the catalyst layer.