Low temperature salicide for replacement gate nanowires

摘要

Techniques for integrating low temperature salicide formation in a replacement gate device process flow are provided. In one aspect, a method of fabricating a FET device is provided that includes the following steps. A dummy gate(s) is formed over an active area of a wafer. A gap filler material is deposited around the dummy gate. The dummy gate is removed selective to the gap filler material, forming a trench in the gap filler material. A replacement gate is formed in the trench in the gap filler material. The replacement gate is recessed below a surface of the gap filler material. A gate cap is formed in the recess above the replacement gate. The gap filler material is etched back to expose at least a portion of the source and drain regions of the device. A salicide is formed on source and drain regions of the device.

主权项

1. A method of fabricating a field-effect transistor (FET) device, the method comprising the steps of:
forming at least one dummy gate over an active area of a wafer, wherein the dummy gate is formed over a portion of the active area which serves as a channel region of the device, wherein portions of the active area extending out from under the dummy gate serve as source and drain regions of the device, wherein the active area of the wafer comprises one or more fins, wherein each of the fins comprises at least one silicon layer and at least one sacrificial layer in a stack on the wafer, and wherein the dummy gate is formed surrounding the fins; forming spacers on opposite sides of the dummy gate; depositing a gap filler material around the dummy gate; removing the dummy gate selective to the gap filler material, forming a trench in the gap filler material; following removal of the dummy gate, removing the sacrificial layer from each of the fins, thus releasing the silicon layer from each of the fins resulting in the silicon layer forming a suspended nanowire; forming a replacement gate in the trench in the gap filler material; annealing the replacement gate at a temperature of from about 700° C. to about 1,300° C.; recessing the replacement gate below a surface of the gap filler material forming a recess in the gap filler material above the replacement gate; forming a gate cap in the recess above the replacement gate; etching back the gap filler material to expose at least a portion of the source and drain regions of the device; and forming a salicide on the source and drain regions of the device.