| 发明名称 | Integrated circuit assembly with cushion polymer layer | ||
| 摘要 | A method of forming an integrated circuit assembly includes forming an insulator layer on a preliminary semiconductor assembly. The preliminary semiconductor assembly includes a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side. The insulator is formed on the second side and an end of the conductive via. The method includes forming a polymer layer on the insulator layer, removing a quantity of the polymer layer sufficient to expose the end of the conductive via through the insulator layer, and forming a conductive contact on the polymer layer and the end of the conductive via. | ||
| 申请公布号 | US9209128(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201414231816 | 申请日期 | 2014.04.01 |
| 申请人 | International Business Machines Corporation;HITACHI CHEMICAL DUPONT MICROSYSTEMS, L.L.C. | 发明人 | Andry Paul S.;Knickerbocker Sarah H.;Legario Ron R.;Tsang Cornelia K.;Zussman Melvin P. |
| 分类号 | H01L21/20;H01L21/4763;H01L21/44;H01L23/522;H01L23/528;H01L23/532;H01L21/768;H01L21/3105;H01L21/02 | 主分类号 | H01L21/20 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Meyers Steven |
| 主权项 | 1. A method of forming an integrated circuit assembly, comprising: forming an insulator layer on a preliminary semiconductor assembly comprising a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side, the insulator being formed on the second side and an end of the conductive via, forming a polymer layer on the insulator layer; removing a quantity of the polymer layer sufficient to expose the end of the conductive via through the insulator layer; and forming a conductive contact on the polymer layer and the end of the conductive via. | ||
| 地址 | Armonk NY US | ||