| 发明名称 | Isolation structure of semiconductor device | ||
| 摘要 | The invention relates to an isolation structure of a semiconductor device. An exemplary isolation structure for a semiconductor device comprises a substrate comprising a trench; a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an oxide layer of the strained material over the strained material; a high-k dielectric layer over the oxide layer; and a dielectric layer over the high-k dielectric layer filling the trench. | ||
| 申请公布号 | US9209066(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201313782105 | 申请日期 | 2013.03.01 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chen Shu-Han;Wu Cheng-Hsien;Ko Chih-Hsin;Wann Clement Hsingjen |
| 分类号 | H01L21/70;H01L23/58;H01L21/762;H01L29/78;H01L29/51;H01L29/66;H01L29/165 | 主分类号 | H01L21/70 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. An isolation structure for a semiconductor device comprising: a substrate comprising a trench; a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate, and wherein the strained material comprises an oxide layer of the strained material over a remainder of the strained material; a high-k dielectric layer over the oxide layer; and a dielectric layer over the high-k dielectric layer filling the trench, wherein a top surface of the strained material extends further away from a bottom of the trench than a top surface of the dielectric layer. | ||
| 地址 | Hsin-Chu TW | ||