发明名称 |
Rapid conductive cooling using a secondary process plane |
摘要 |
In one embodiment, a substrate processing apparatus includes a chamber having an interior volume with an upper portion and a lower portion, a cooling source disposed in the upper portion of the interior volume, a heating source opposing the cooling source, a magnetically movable substrate support that moves between the upper portion and the lower the portion, and a plurality of sensors coupled to the chamber to detect the position of the substrate support relative to the heating source and the cooling source. |
申请公布号 |
US9209049(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201414189696 |
申请日期 |
2014.02.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Sorabji Khurshed;Lerner Alexander N. |
分类号 |
H01L21/00;H01L21/67;C30B31/14;H01L21/30;H01L21/66 |
主分类号 |
H01L21/00 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A method for thermally treating a substrate, comprising:
providing a chamber having a levitating substrate support disposed therein; sensing a position of the substrate support within the chamber; adjusting the position of the substrate support within the chamber; moving the substrate to a first position; heating the substrate in the first position; moving the substrate to a second position adjacent an active cooling means; and cooling the substrate in the second position, wherein the first and second positions are disposed in the chamber. |
地址 |
Santa Clara CA US |