发明名称 Rapid conductive cooling using a secondary process plane
摘要 In one embodiment, a substrate processing apparatus includes a chamber having an interior volume with an upper portion and a lower portion, a cooling source disposed in the upper portion of the interior volume, a heating source opposing the cooling source, a magnetically movable substrate support that moves between the upper portion and the lower the portion, and a plurality of sensors coupled to the chamber to detect the position of the substrate support relative to the heating source and the cooling source.
申请公布号 US9209049(B2) 申请公布日期 2015.12.08
申请号 US201414189696 申请日期 2014.02.25
申请人 APPLIED MATERIALS, INC. 发明人 Sorabji Khurshed;Lerner Alexander N.
分类号 H01L21/00;H01L21/67;C30B31/14;H01L21/30;H01L21/66 主分类号 H01L21/00
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A method for thermally treating a substrate, comprising: providing a chamber having a levitating substrate support disposed therein; sensing a position of the substrate support within the chamber; adjusting the position of the substrate support within the chamber; moving the substrate to a first position; heating the substrate in the first position; moving the substrate to a second position adjacent an active cooling means; and cooling the substrate in the second position, wherein the first and second positions are disposed in the chamber.
地址 Santa Clara CA US