| 发明名称 | Semiconductor manufacturing method and semiconductor manufacturing apparatus | ||
| 摘要 | In a semiconductor manufacturing method for performing thermal treatment of a substrate with plasma while moving the substrate on which devices are formed relatively to a plasma generating apparatus which generates the plasma by allowing electromagnetic fields to act on a plasma gas, a second surface of the substrate is irradiated with the plasma of the plasma generating apparatus in a state where the second surface of the substrate which is the opposite side of a first surface of the substrate on which the devices are formed faces the plasma generating apparatus. | ||
| 申请公布号 | US9209043(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201514682083 | 申请日期 | 2015.04.08 |
| 申请人 | Panasonic Intellectual Property Management Co., Ltd. | 发明人 | Kitagawa Dai;Okumura Tomohiro |
| 分类号 | H01L21/324;H01L21/67;H01L21/268 | 主分类号 | H01L21/324 |
| 代理机构 | Panasonic Patent Center | 代理人 | Panasonic Patent Center |
| 主权项 | 1. A semiconductor manufacturing method performing thermal treatment of a substrate by using plasma while moving the substrate on which devices are formed relatively to a plasma generating apparatus which generates the plasma by allowing electromagnetic fields to act on a plasma gas, comprising: irradiating a second surface of the substrate with the plasma in a state where the second surface of the substrate which is the opposite side of a first surface of the substrate on which the devices are formed faces the plasma generating apparatus. | ||
| 地址 | Osaka JP | ||