发明名称 |
Method and system for manufacturing a semi-conducting backplane |
摘要 |
Methods and systems to manufacture a semi-conducting backplane are described. According to one set of implementations, semi-conducting particles are positioned in a supporting material of the semi-conducting backplane utilizing perforations in the supporting material or perforations in a removable support member upon which the semi-conducting backplane is constructed. For example, semi-conducting particles are deposited in perforations on a supporting member such that a portion of the semi-conducting particles protrudes from the supporting member. Suction is applied to the semi-conducting particles to retain the semi-conducting particles in the perforations and a layer of encapsulant material is applied onto the supporting member to cover the protruding portion. The supporting member is then removed from the semi-conducting particles and the layer of encapsulant material, which together form an assembly of the semi-conducting particles and the layer of encapsulant material. The portion of the semi-conducting particles is then planarized. |
申请公布号 |
US9209019(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201314019131 |
申请日期 |
2013.09.05 |
申请人 |
DIFTEK LASERS, INC. |
发明人 |
Dykaar Douglas R. |
分类号 |
H01L23/00;H01L21/02;H01L21/67;H01L21/56;H01L23/28;H01L21/84 |
主分类号 |
H01L23/00 |
代理机构 |
Perry + Currier, Inc. |
代理人 |
Perry + Currier, Inc. |
主权项 |
1. A method for manufacturing a semi-conducting backplane comprising:
depositing semi-conducting particles in perforations of a supporting member such that a portion of the semi-conducting particles protrudes from the supporting member; applying suction to another portion of the semi-conducting particles to retain the semi-conducting particles in the perforations; applying a layer of encapsulant material onto the supporting member such that the portion of the semi-conducting particles is covered by the layer of encapsulant material; removing the supporting member to reveal an assembly of the semi-conducting particles and the layer of encapsulant material; and planarizing the other portion of the semi-conducting particles. |
地址 |
Waterloo, Ontario CA |