发明名称 Memory array with power-efficient read architecture
摘要 Various embodiments comprise apparatuses and methods including a three-dimensional memory apparatus having upper strings and lower strings. The upper strings can include a first string of memory cells and a second string of memory cells arranged substantially parallel and adjacent to one another. The lower strings can include a third string of memory cells and a fourth string of memory cells arranged substantially parallel and adjacent to one another. The strings can each have a separate sense amplifier coupled thereto. The first and third strings and the second and fourth strings can be configured to be respectively coupled in series with each other during a read operation. Additional apparatuses and methods are described.
申请公布号 US9208891(B2) 申请公布日期 2015.12.08
申请号 US201414462078 申请日期 2014.08.18
申请人 Micron Technology, Inc. 发明人 Tanzawa Toru
分类号 G11C16/26;G11C16/24;G11C5/02;G11C16/04;G11C11/56 主分类号 G11C16/26
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. An apparatus, comprising: a first string of memory cells; and a second string of memory cells, the second string of memory cells being configured to receive at least a portion of a current flowing in the first string of memory cells during a read operation, the first string of memory cells and the second string of memory cells being coupled by a common node located therebetween.
地址 Boise ID US