发明名称 |
Memory array with power-efficient read architecture |
摘要 |
Various embodiments comprise apparatuses and methods including a three-dimensional memory apparatus having upper strings and lower strings. The upper strings can include a first string of memory cells and a second string of memory cells arranged substantially parallel and adjacent to one another. The lower strings can include a third string of memory cells and a fourth string of memory cells arranged substantially parallel and adjacent to one another. The strings can each have a separate sense amplifier coupled thereto. The first and third strings and the second and fourth strings can be configured to be respectively coupled in series with each other during a read operation. Additional apparatuses and methods are described. |
申请公布号 |
US9208891(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201414462078 |
申请日期 |
2014.08.18 |
申请人 |
Micron Technology, Inc. |
发明人 |
Tanzawa Toru |
分类号 |
G11C16/26;G11C16/24;G11C5/02;G11C16/04;G11C11/56 |
主分类号 |
G11C16/26 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. An apparatus, comprising:
a first string of memory cells; and a second string of memory cells, the second string of memory cells being configured to receive at least a portion of a current flowing in the first string of memory cells during a read operation, the first string of memory cells and the second string of memory cells being coupled by a common node located therebetween. |
地址 |
Boise ID US |